Sanken Electric Co., Ltd. Bipolar Transistor Arrays STA460C

Description
Bipolar (BJT) Transistor Array 2 NPN Darlington (Dual) 60V 6A 3.2W Through Hole 10-SIP
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 2 NPN Darlington (Dual) 60V 6A 3.2W Through Hole 10-SIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - STA460C-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
STA460C-ND
Bipolar Transistor Arrays STA460C-ND
Bipolar (BJT) Transistor Array 2 NPN Darlington (Dual) 60V 6A 3.2W Through Hole 10-SIP

Bipolar (BJT) Transistor Array 2 NPN Darlington (Dual) 60V 6A 3.2W Through Hole 10-SIP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - STA460C - 1260537-STA460C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - STA460C
1260537-STA460C
TRANSISTORS - Transistors (BJT) - Arrays - STA460C 1260537-STA460C
Manufacturer: Sanken Win Source Part Number: 1260537-STA460C Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: 10-SIP Power - Max: 3.2W Transistor Type: 2 NPN Darlington (Dual) Family Name: STA460C Categories: Discrete Semiconductor Products Manufacturer Homepage: www.sanken-ele.co.jp /en RoHS State: Request Verification Manufacturer Package: 10-SIP Current - Collector (Ic) (Maximum): 6A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 150mV @ 15mA, 1.5A Current - Collector Cutoff (Maximum): 10μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 700 @ 1A, 1V Introduction Date: March 05, 2001 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Sanken
Win Source Part Number: 1260537-STA460C
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: 10-SIP
Power - Max: 3.2W
Transistor Type: 2 NPN Darlington (Dual)
Family Name: STA460C
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.sanken-ele.co.jp/en
RoHS State: Request Verification
Manufacturer Package: 10-SIP
Current - Collector (Ic) (Maximum): 6A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 150mV @ 15mA, 1.5A
Current - Collector Cutoff (Maximum): 10μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 700 @ 1A, 1V
Introduction Date: March 05, 2001
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - STA460C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
STA460C
Discrete Semiconductor Products - Transistors - Bipolar (BJT) STA460C
TRANS 2NPN DARL 60V 6A

TRANS 2NPN DARL 60V 6A

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Darlington Transistors Bipolar RF Transistors
Product Number STA460C-ND 1260537-STA460C STA460C
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - STA460C Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type 10-SIP SOT3
IC(max) 0.0100 milliamps 6000 milliamps
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