Sanken Electric Co., Ltd. Bipolar Transistor Arrays STA302A

Description
Bipolar (BJT) Transistor Array 3 PNP Darlington (Emitter Coupled) 50V 4A 3W Through Hole 8-SIP
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 3 PNP Darlington (Emitter Coupled) 50V 4A 3W Through Hole 8-SIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - STA302A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
STA302A-ND
Bipolar Transistor Arrays STA302A-ND
Bipolar (BJT) Transistor Array 3 PNP Darlington (Emitter Coupled) 50V 4A 3W Through Hole 8-SIP

Bipolar (BJT) Transistor Array 3 PNP Darlington (Emitter Coupled) 50V 4A 3W Through Hole 8-SIP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - STA302A - 047329-STA302A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - STA302A
047329-STA302A
TRANSISTORS - Transistors (BJT) - Arrays - STA302A 047329-STA302A
Manufacturer: Sanken Win Source Part Number: 047329-STA302A Packaging: Bulk Mounting: Through Hole Transistor Polarity: 3 PNP Darlington (Emitter Coupled) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SIP Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 2V @ 10mA, 3A Collector Cut-off Current(Max): 100μA (ICBO) Typical Gain (hFE) (Min): 1000 @ 3A, 4V Maximum Power Dissipation: 3W Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Sanken
Win Source Part Number: 047329-STA302A
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: 3 PNP Darlington (Emitter Coupled)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SIP
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 2V @ 10mA, 3A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 1000 @ 3A, 4V
Maximum Power Dissipation: 3W
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - STA302A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
STA302A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) STA302A
TRANS 3PNP DARL 50V 4A 8SIP

TRANS 3PNP DARL 50V 4A 8SIP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number STA302A-ND 047329-STA302A STA302A
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - STA302A Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; 3 PNP Darlington (Emitter Coupled)
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