Sanken Electric Co., Ltd. Bipolar Transistor Arrays SLA6012

Description
Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 4A 5W, 25W Through Hole 12-SIP
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Description
Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 4A 5W, 25W Through Hole 12-SIP
Request a Quote Datasheet

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Product
Description
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Bipolar Transistor Arrays - SLA6012-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SLA6012-ND
Bipolar Transistor Arrays SLA6012-ND
Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 4A 5W, 25W Through Hole 12-SIP

Bipolar (BJT) Transistor Array 3 NPN, 3 PNP Darlington (3-Phase Bridge) 60V 4A 5W, 25W Through Hole 12-SIP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - SLA6012 - 046943-SLA6012 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - SLA6012
046943-SLA6012
TRANSISTORS - Transistors (BJT) - Arrays - SLA6012 046943-SLA6012
Manufacturer: Sanken Win Source Part Number: 046943-SLA6012 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 3 NPN, 3 PNP Darlington (3-Phase Bridge) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 12-SIP Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 1.5V @ 6mA, 3A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 2000 @ 3A, 4V Maximum Power Dissipation: 5W, 25W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Sanken
Win Source Part Number: 046943-SLA6012
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: 3 NPN, 3 PNP Darlington (3-Phase Bridge)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 12-SIP
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 1.5V @ 6mA, 3A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 2000 @ 3A, 4V
Maximum Power Dissipation: 5W, 25W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SLA6012 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SLA6012
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SLA6012
TRANS 3NPN/3PNP DARL 60V 12SIP

TRANS 3NPN/3PNP DARL 60V 12SIP

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number SLA6012-ND 046943-SLA6012 SLA6012
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - SLA6012 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP NPN; PNP; 3 NPN, 3 PNP Darlington (3-Phase Bridge)
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