Mosfet Array 3 N and 3 P-Channel (3-Phase Bridge) 60V 4A 5W Through Hole 12-SIP
Manufacturer: Sanken
Win Source Part Number: 042651-SLA5059
Packaging: Tube/Rail
Mounting: Through Hole
FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 12-SIP
Maximum Power Dissipation: 5W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Input Capacitance: 150pF @ 10V
Maximum Rds On at Id,Vgs: 550 mOhm @ 2A, 4V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
MOSFET 3N/3P-CH 60V 4A 12-SIP
MOSFET 3N/3P-CH 60V 4A 12SIP
| DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SLA5059-ND | 042651-SLA5059 | 681-SLA5059 | SLA5059 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SLA5059 | MOSFET 3N/3P-CH 60V 4A 12-SIP | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 12-SIP Exposed Tab | SOT3; 12-SIP | ||
| Polarity | P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | ||
| V(BR)DSS | 60 volts | 60 volts | ||
| PD | 5000 milliwatts | 30000 milliwatts | ||
| TJ | 150 C (302 F) | 150 C (302 F) |
