MOSFET N-CH 30V 12A 8DFN Product overview: GKI03080 from Sanken Electric Co., Ltd. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GKI03080 can be used for catalog matching and distributor lookup.
N-Channel 30V 12A (Ta) 3.1W (Ta), 40W (Tc) Surface Mount 8-DFN (5x6)
N-Channel 30V 12A (Ta) 3.1W (Ta), 40W (Tc) Surface Mount 8-DFN (5x6)
Manufacturer: Sanken
Win Source Part Number: 872782-GKI03080
Operating Temperature Range: 150°C (TJ)
Features: N-Channel 30 V 12A (Ta) 3.1W (Ta), 40W (Tc) Surface Mount 8-DFN (5x6)
Package: Reel - TR
Package: 8-PowerTDFN
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: 8-DFN (5x6)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 87 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: GKI03080CT, GKI03080 DK, GKI03080DKR, GKI03080TR
MOSFET N-CH 30V 12A 8DFN
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-GKI03080 | GKI03080TR-ND | 872782-GKI03080 | GKI03080 |
| Product Name | 30V 12A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - GKI03080 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 30 volts | |||
| PD | 3100 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) |