Sanken Electric Co., Ltd. Single FETs, MOSFETs 2SK3199

Description
N-Channel 500V 5A (Ta) 30W (Tc) Through Hole TO-220F
Request a Quote Datasheet
Description
N-Channel 500V 5A (Ta) 30W (Tc) Through Hole TO-220F
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 2SK3199-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SK3199-ND
Single FETs, MOSFETs 2SK3199-ND
N-Channel 500V 5A (Ta) 30W (Tc) Through Hole TO-220F

N-Channel 500V 5A (Ta) 30W (Tc) Through Hole TO-220F

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3199 - 053836-2SK3199 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3199
053836-2SK3199
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3199 053836-2SK3199
Manufacturer: Sanken Win Source Part Number: 053836-2SK3199 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 650pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

Manufacturer: Sanken
Win Source Part Number: 053836-2SK3199
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Input Capacitance: 650pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK3199 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK3199
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK3199
MOSFET N-CH 500V 5A TO220F

MOSFET N-CH 500V 5A TO220F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2SK3199-ND 053836-2SK3199 2SK3199
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3199 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220F 650 pF @ 10 V
V(BR)DSS 500 volts
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