Sanken Electric Co., Ltd. Single Bipolar Transistors 2SD2560

Description
Bipolar (BJT) Transistor NPN - Darlington 150V 15A 70MHz 130W Through Hole TO-3P
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 150V 15A 70MHz 130W Through Hole TO-3P
Request a Quote Datasheet

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Supplier Links
Single Bipolar Transistors - 2SD2560-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SD2560-ND
Single Bipolar Transistors 2SD2560-ND
Bipolar (BJT) Transistor NPN - Darlington 150V 15A 70MHz 130W Through Hole TO-3P

Bipolar (BJT) Transistor NPN - Darlington 150V 15A 70MHz 130W Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD2560 - 762890-2SD2560 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD2560
762890-2SD2560
TRANSISTORS - Transistors (BJT) - Single - 2SD2560 762890-2SD2560
Manufacturer: Sanken Win Source Part Number: 762890-2SD2560 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-3P-3, SC-65-3 Power - Max: 130W Transistor Type: NPN - Darlington Frequency - Transition: 70MHz Family Name: 2SD2560 Categories: Discrete Semiconductor Products Manufacturer Package: TO-3P Current - Collector (Ic) (Maximum): 15A Voltage - Collector Emitter Breakdown (Maximum): 150V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 10mA, 10A Current - Collector Cutoff (Maximum): 100μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 5000 @ 10A, 4V Alternative Parts (Cross-Reference): MJH11018; MJH11018G; Introduction Date: June 18, 2001 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Sanken
Win Source Part Number: 762890-2SD2560
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-3P-3, SC-65-3
Power - Max: 130W
Transistor Type: NPN - Darlington
Frequency - Transition: 70MHz
Family Name: 2SD2560
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3P
Current - Collector (Ic) (Maximum): 15A
Voltage - Collector Emitter Breakdown (Maximum): 150V
Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 10mA, 10A
Current - Collector Cutoff (Maximum): 100μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 5000 @ 10A, 4V
Alternative Parts (Cross-Reference): MJH11018; MJH11018G;
Introduction Date: June 18, 2001
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD2560 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD2560
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD2560
TRANS NPN DARL 150V 15A TO3P

TRANS NPN DARL 150V 15A TO3P

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SD2560-ND 762890-2SD2560 2SD2560
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SD2560 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
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