Sanken Electric Co., Ltd. Single Bipolar Transistors 2SD2017

Description
Bipolar (BJT) Transistor NPN - Darlington 250V 6A 20MHz 35W Through Hole TO-220F
  • Single Bipolar Transistors - 2SD2017-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2SD2017 - 762851-2SD2017 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD2017 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN - Darlington 250V 6A 20MHz 35W Through Hole TO-220F
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - 2SD2017-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SD2017-ND
Single Bipolar Transistors 2SD2017-ND
Bipolar (BJT) Transistor NPN - Darlington 250V 6A 20MHz 35W Through Hole TO-220F

Bipolar (BJT) Transistor NPN - Darlington 250V 6A 20MHz 35W Through Hole TO-220F

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD2017 - 762851-2SD2017 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD2017
762851-2SD2017
TRANSISTORS - Transistors (BJT) - Single - 2SD2017 762851-2SD2017
Manufacturer: Sanken Win Source Part Number: 762851-2SD2017 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack Power - Max: 35W Transistor Type: NPN - Darlington Frequency - Transition: 20MHz Family Name: 2SD2017 Categories: Discrete Semiconductor Products Manufacturer Package: TO-220F Current - Collector (Ic) (Maximum): 6A Voltage - Collector Emitter Breakdown (Maximum): 250V Vce Saturation (Maximum) @ Ib, Ic: 1.5V @ 2mA, 2A Current - Collector Cutoff (Maximum): 100μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 2000 @ 2A, 2V Alternative Parts (Cross-Reference): TTD1410B; 2SD1792-4112; 2SD1792-4012; Introduction Date: June 18, 2001 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: Sanken
Win Source Part Number: 762851-2SD2017
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack
Power - Max: 35W
Transistor Type: NPN - Darlington
Frequency - Transition: 20MHz
Family Name: 2SD2017
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-220F
Current - Collector (Ic) (Maximum): 6A
Voltage - Collector Emitter Breakdown (Maximum): 250V
Vce Saturation (Maximum) @ Ib, Ic: 1.5V @ 2mA, 2A
Current - Collector Cutoff (Maximum): 100μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 2000 @ 2A, 2V
Alternative Parts (Cross-Reference): TTD1410B; 2SD1792-4112; 2SD1792-4012;
Introduction Date: June 18, 2001
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SD2017 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SD2017
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SD2017
TRANS NPN DARL 250V 6A TO220F

TRANS NPN DARL 250V 6A TO220F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SD2017-ND 762851-2SD2017 2SD2017
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SD2017 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
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