Sanken Electric Co., Ltd. Single Bipolar Transistors 2SB1258

Description
Bipolar (BJT) Transistor PNP - Darlington 100V 6A 100MHz 30W Through Hole TO-220F
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP - Darlington 100V 6A 100MHz 30W Through Hole TO-220F
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 2SB1258-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1258-ND
Single Bipolar Transistors 2SB1258-ND
Bipolar (BJT) Transistor PNP - Darlington 100V 6A 100MHz 30W Through Hole TO-220F

Bipolar (BJT) Transistor PNP - Darlington 100V 6A 100MHz 30W Through Hole TO-220F

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SB1258 - 1124837-2SB1258 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1258
1124837-2SB1258
TRANSISTORS - Transistors (BJT) - Single - 2SB1258 1124837-2SB1258
Manufacturer: Sanken Win Source Part Number: 1124837-2SB1258 Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP - Darlington Frequency - Transition: 100MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-220F Temperature Range - Operating: 150°C Manufacturer Homepage: www.sanken-ele.co.jp /en Manufacturer Package: TO-220-3 Full Pack Current - Collector (Ic) (Maximum): 6A Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 10μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1.5V at 6mA, 3A DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 3A, 2V Maximum Power: 30W

Manufacturer: Sanken
Win Source Part Number: 1124837-2SB1258
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: PNP - Darlington
Frequency - Transition: 100MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220F
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.sanken-ele.co.jp/en
Manufacturer Package: TO-220-3 Full Pack
Current - Collector (Ic) (Maximum): 6A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Current - Collector Cutoff (Maximum): 10μA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1.5V at 6mA, 3A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 1000 at 3A, 2V
Maximum Power: 30W

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1258 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1258
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1258
TRANS PNP DARL 100V 6A TO220F

TRANS PNP DARL 100V 6A TO220F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors
Product Number 2SB1258-ND 1124837-2SB1258 2SB1258
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SB1258 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3
Packing Method Bulk; Bulk Bulk; Bulk
TJ 150 C (302 F)
Power Gain 1000 dB
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