Sanken Electric Co., Ltd. Single Bipolar Transistors 2SA1909

Description
Bipolar (BJT) Transistor PNP 140V 10A 20MHz 80W Through Hole TO-3PF
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 140V 10A 20MHz 80W Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

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Single Bipolar Transistors - 2SA1909-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA1909-ND
Single Bipolar Transistors 2SA1909-ND
Bipolar (BJT) Transistor PNP 140V 10A 20MHz 80W Through Hole TO-3PF

Bipolar (BJT) Transistor PNP 140V 10A 20MHz 80W Through Hole TO-3PF

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SA1909 - 762405-2SA1909 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1909
762405-2SA1909
TRANSISTORS - Transistors (BJT) - Single - 2SA1909 762405-2SA1909
Manufacturer: Sanken Win Source Part Number: 762405-2SA1909 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-3P-3 Full Pack Power - Max: 80W Transistor Type: PNP Frequency - Transition: 20MHz Family Name: 2SA1909 Categories: Discrete Semiconductor Products Manufacturer Package: TO-3PF Current - Collector (Ic) (Maximum): 10A Voltage - Collector Emitter Breakdown (Maximum): 140V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 500mA, 5A Current - Collector Cutoff (Maximum): 10μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 3A, 4V Alternative Parts (Cross-Reference): FJAF4210O; FJAF4210Y; 2SB1361P; ; Introduction Date: July 07, 1999 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Sanken
Win Source Part Number: 762405-2SA1909
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-3P-3 Full Pack
Power - Max: 80W
Transistor Type: PNP
Frequency - Transition: 20MHz
Family Name: 2SA1909
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3PF
Current - Collector (Ic) (Maximum): 10A
Voltage - Collector Emitter Breakdown (Maximum): 140V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Maximum): 10μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 3A, 4V
Alternative Parts (Cross-Reference): FJAF4210O; FJAF4210Y; 2SB1361P; ;
Introduction Date: July 07, 1999
ECCN: EAR99
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA1909 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SA1909
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SA1909
TRANS PNP 140V 10A TO3PF

TRANS PNP 140V 10A TO3PF

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SA1909-ND 762405-2SA1909 2SA1909
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SA1909 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
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