Sanken Electric Co., Ltd. Single Bipolar Transistors 2SA1907

Description
Bipolar (BJT) Transistor PNP 80V 6A 20MHz 60W Through Hole TO-3PF
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 80V 6A 20MHz 60W Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

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Product
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Single Bipolar Transistors - 2SA1907-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA1907-ND
Single Bipolar Transistors 2SA1907-ND
Bipolar (BJT) Transistor PNP 80V 6A 20MHz 60W Through Hole TO-3PF

Bipolar (BJT) Transistor PNP 80V 6A 20MHz 60W Through Hole TO-3PF

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SA1907 - 762403-2SA1907 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1907
762403-2SA1907
TRANSISTORS - Transistors (BJT) - Single - 2SA1907 762403-2SA1907
Manufacturer: Sanken Win Source Part Number: 762403-2SA1907 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-3P-3 Full Pack Power - Max: 60W Transistor Type: PNP Frequency - Transition: 20MHz Family Name: 2SA1907 Categories: Discrete Semiconductor Products Manufacturer Package: TO-3PF Current - Collector (Ic) (Maximum): 6A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 12A Current - Collector Cutoff (Maximum): 10μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 2A, 4V Alternative Parts (Cross-Reference): NJW44H11G; Introduction Date: July 07, 1999 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited

Manufacturer: Sanken
Win Source Part Number: 762403-2SA1907
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-3P-3 Full Pack
Power - Max: 60W
Transistor Type: PNP
Frequency - Transition: 20MHz
Family Name: 2SA1907
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3PF
Current - Collector (Ic) (Maximum): 6A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 12A
Current - Collector Cutoff (Maximum): 10μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 2A, 4V
Alternative Parts (Cross-Reference): NJW44H11G;
Introduction Date: July 07, 1999
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA1907 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SA1907
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SA1907
TRANS PNP 80V 6A TO3PF

TRANS PNP 80V 6A TO3PF

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SA1907-ND 762403-2SA1907 2SA1907
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SA1907 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
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