Samsung Electronics Co., Ltd. Transistor SSP6N60A

Description
POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 600V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
Description
POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 600V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 532343 - Radwell International
Willingboro, NJ, United States
Transistor
532343
Transistor 532343
POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 600V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 600V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 532343
Product Name Transistor
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