Samsung Electronics Co., Ltd. IT infrastructure Memory KLUDG8J1ZD-C0CQ

Description
Category: IT infrastructure Memory Win Source Part Number: 1455087-KLUDG8J1ZD-C 0CQ Manufacturer: Samsung
  • IT infrastructure Memory - 1455087-KLUDG8J1ZD-C0CQ - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1455087-KLUDG8J1ZD-C 0CQ Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1455087-KLUDG8J1ZD-C0CQ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1455087-KLUDG8J1ZD-C0CQ
IT infrastructure Memory 1455087-KLUDG8J1ZD-C0CQ
Category: IT infrastructure Memory Win Source Part Number: 1455087-KLUDG8J1ZD-C 0CQ Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1455087-KLUDG8J1ZD-C0CQ
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1455087-KLUDG8J1ZD-C0CQ
Product Name IT infrastructure Memory
Unlock Full Specs
to access all available technical data

Similar Products

Infineon Technologies AG
Integrated Circuits (ICs) - Memory - Memory
40060424
View Details
Memory - AS5SS256K36 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5SS256K36
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details
Flash Memory - 1882679P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882679P
Specs
Memory Category Flash
Density 128000 kbits
Package Type WSON
View Details
DIP Memory IC and Storage Component - 2020-NM27C010N200 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
DIP Memory IC and Storage Component
NM27C010N200
Specs
Memory Category EPROM; Non-Volatile
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers