Samsung Electronics Co., Ltd. IT infrastructure Memory K9WAG08U0B-PCB0

Description
Category: IT infrastructure Memory Win Source Part Number: 1453660-K9WAG08U0B-P CB0 Manufacturer: Samsung
  • IT infrastructure Memory - 1453660-K9WAG08U0B-PCB0 - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1453660-K9WAG08U0B-P CB0 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1453660-K9WAG08U0B-PCB0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1453660-K9WAG08U0B-PCB0
IT infrastructure Memory 1453660-K9WAG08U0B-PCB0
Category: IT infrastructure Memory Win Source Part Number: 1453660-K9WAG08U0B-P CB0 Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1453660-K9WAG08U0B-PCB0
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1453660-K9WAG08U0B-PCB0
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

- 27S29PC - Rochester Electronics
Rochester Electronics
27S29PC
Specs
Memory Category PROM
Package Type DIP; PDIP
View Details
Memory IC and Storage Component - 736-DP8521AV-25 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
DP8521AV-25
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
2 suppliers
Infineon Technologies AG
Integrated Circuits (ICs) - Memory - Memory
IS26KS512S-DPBLE100
Specs
Memory Category Flash; FLASH
Cycle Time 96 ns
Density 64000 kbits
View Details
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS58LC1001
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details