Samsung Electronics Co., Ltd. IT infrastructure Memory K9F5608U0D-PCB0T

Description
Category: IT infrastructure Memory Win Source Part Number: 1451906-K9F5608U0D-P CB0T Manufacturer: Samsung
  • IT infrastructure Memory - 1451906-K9F5608U0D-PCB0T - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1451906-K9F5608U0D-P CB0T Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1451906-K9F5608U0D-PCB0T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1451906-K9F5608U0D-PCB0T
IT infrastructure Memory 1451906-K9F5608U0D-PCB0T
Category: IT infrastructure Memory Win Source Part Number: 1451906-K9F5608U0D-P CB0T Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1451906-K9F5608U0D-PCB0T
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1451906-K9F5608U0D-PCB0T
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4SD16M16 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4SD16M16
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 128000 kbits
View Details
Logic - FIFOs Memory - 67C4013-10NL - Lingto Electronic Limited
Rochester Electronics
Logic - FIFOs Memory
67C4013-10NL
Specs
Data Rate 10 MHz
Operating Current 35 mA
View Details
Flash Memory - 1882861 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882861
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
- S25FL116K0XMFB040 - Rochester Electronics
Infineon Technologies AG
S25FL116K0XMFB040
Specs
Memory Category Flash
Package Type SOIC; SOIC8
View Details