Samsung Electronics Co., Ltd. IT infrastructure Memory K9F5608R0D-JCB0

Description
Category: IT infrastructure Memory Win Source Part Number: 1452043-K9F5608R0D-J CB0 Manufacturer: Samsung
  • IT infrastructure Memory - 1452043-K9F5608R0D-JCB0 - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1452043-K9F5608R0D-J CB0 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1452043-K9F5608R0D-JCB0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1452043-K9F5608R0D-JCB0
IT infrastructure Memory 1452043-K9F5608R0D-JCB0
Category: IT infrastructure Memory Win Source Part Number: 1452043-K9F5608R0D-J CB0 Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1452043-K9F5608R0D-JCB0
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1452043-K9F5608R0D-JCB0
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882682 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882682
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - S25FL164K0XNFIQ11Z - Lingto Electronic Limited
Rochester Electronics
Memory
S25FL164K0XNFIQ11Z
Specs
Memory Category Flash; Flash
Density 64000 kbits
View Details
CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register - CD40105BF - Texas Instruments
Texas Instruments
CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register
CD40105BF
Specs
Memory Category FIFO
Package Type CDIP,DIESALE
View Details
3 suppliers
Memory - MYX4DDR3L128M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DDR3L128M16JTBG
Specs
Memory Category DDR3
Access Time 1.25 ns
Operating Temperature -40 to 95 C (-40 to 203 F)
View Details