Samsung Electronics Co., Ltd. IT infrastructure Memory K9F2G08U0F-SCB0

Description
Category: IT infrastructure Memory Win Source Part Number: 1453349-K9F2G08U0F-S CB0 Manufacturer: Samsung
  • IT infrastructure Memory - 1453349-K9F2G08U0F-SCB0 - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1453349-K9F2G08U0F-S CB0 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1453349-K9F2G08U0F-SCB0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1453349-K9F2G08U0F-SCB0
IT infrastructure Memory 1453349-K9F2G08U0F-SCB0
Category: IT infrastructure Memory Win Source Part Number: 1453349-K9F2G08U0F-S CB0 Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1453349-K9F2G08U0F-SCB0
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1453349-K9F2G08U0F-SCB0
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8FLC2M32
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1712194 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1712194
Specs
Memory Category Flash
Number of Words 512 k
Package Type SOIC
View Details
Memory - Memory - Controllers - BQ2204ASNTRG4 - 1154091-BQ2204ASNTRG4 - Win Source Electronics
Texas Instruments
Memory - Memory - Controllers - BQ2204ASNTRG4
BQ2204ASNTRG4
Specs
Memory Category SRAM Chip
View Details
Memory - IS29GL512S-11DHV01 - Lingto Electronic Limited
Infineon Technologies AG
Memory
IS29GL512S-11DHV01
Specs
Memory Category Flash; Flash
Access Time 110 ns
Density 512000 kbits
View Details
2 suppliers