Samsung Electronics Co., Ltd. IT infrastructure Memory K9F1G08U0M-YIB0

Description
Category: IT infrastructure Memory Win Source Part Number: 1453458-K9F1G08U0M-Y IB0 Manufacturer: Samsung
  • IT infrastructure Memory - 1453458-K9F1G08U0M-YIB0 - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1453458-K9F1G08U0M-Y IB0 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1453458-K9F1G08U0M-YIB0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1453458-K9F1G08U0M-YIB0
IT infrastructure Memory 1453458-K9F1G08U0M-YIB0
Category: IT infrastructure Memory Win Source Part Number: 1453458-K9F1G08U0M-Y IB0 Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1453458-K9F1G08U0M-YIB0
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1453458-K9F1G08U0M-YIB0
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

DIP Memory IC and Storage Component - 2020-NM27C010N200 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
DIP Memory IC and Storage Component
NM27C010N200
Specs
Memory Category EPROM; Non-Volatile
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers
Memory - 16-3852-01 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
16-3852-01
View Details
2 suppliers
Memory - MYX4DD3K128M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DD3K128M64PBG2
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024000 kbits
View Details
Memory - 24C01-I/P - Lingto Electronic Limited
Rochester Electronics
Memory
24C01-I/P
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details