Samsung Electronics Co., Ltd. IT infrastructure Memory K9F1208U0A-YIB0

Description
Category: IT infrastructure Memory Win Source Part Number: 1453537-K9F1208U0A-Y IB0 Manufacturer: Samsung
  • IT infrastructure Memory - 1453537-K9F1208U0A-YIB0 - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1453537-K9F1208U0A-Y IB0 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1453537-K9F1208U0A-YIB0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1453537-K9F1208U0A-YIB0
IT infrastructure Memory 1453537-K9F1208U0A-YIB0
Category: IT infrastructure Memory Win Source Part Number: 1453537-K9F1208U0A-Y IB0 Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1453537-K9F1208U0A-YIB0
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1453537-K9F1208U0A-YIB0
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory, 1Mbit, 70Ns, 32-Plcc; Flash Memory Type Cypress Infineon Technologies - 69K8717 - Newark, An Avnet Company
Infineon Technologies AG
Flash Memory, 1Mbit, 70Ns, 32-Plcc; Flash Memory Type Cypress Infineon Technologies
AM29F010B-70JF
Specs
Memory Category Flash
Density 1000 kbits
Package Type LCC
View Details
Memory - 043641WLAD-5 - Lingto Electronic Limited
Rochester Electronics
Memory
043641WLAD-5
View Details
Memory - AS5SP512K18 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5SP512K18
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details
SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420777P
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details