Samsung Electronics Co., Ltd. IT infrastructure Memory K9BCG08U1A-MCB0

Description
Category: IT infrastructure Memory Win Source Part Number: 1452298-K9BCG08U1A-M CB0 Manufacturer: Samsung
  • IT infrastructure Memory - 1452298-K9BCG08U1A-MCB0 - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1452298-K9BCG08U1A-M CB0 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1452298-K9BCG08U1A-MCB0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1452298-K9BCG08U1A-MCB0
IT infrastructure Memory 1452298-K9BCG08U1A-MCB0
Category: IT infrastructure Memory Win Source Part Number: 1452298-K9BCG08U1A-M CB0 Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1452298-K9BCG08U1A-MCB0
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1452298-K9BCG08U1A-MCB0
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-9089909MYA - Lingto Electronic Limited
Rochester Electronics
Memory
5962-9089909MYA
View Details
Memory IC and Storage Component - 774-JBP18S030MJ - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
JBP18S030MJ
Specs
Memory Category PROM
Operating Temperature -55 C (-67 F)
Density 0 kbits
View Details
4 suppliers
Memory - IS29GL512S-11TFV02-TR - Lingto Electronic Limited
Infineon Technologies AG
Memory
IS29GL512S-11TFV02-TR
Specs
Memory Category Flash; Flash
Access Time 110 ns
Density 512000 kbits
View Details
2 suppliers
Memory - MYXxxSMS0xGPS08PB-4108/x - Micross Components, Inc.
Micross Components, Inc.
Memory
MYXxxSMS0xGPS08PB-4108/x
Specs
Memory Category MRAM; STT-MRAM
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 32000000 kbits
View Details