Samsung Electronics Co., Ltd. IT infrastructure Memory K6F4016U6G-EF70000

Description
Category: IT infrastructure Memory Win Source Part Number: 1455497-K6F4016U6G-E F70000 Manufacturer: Samsung
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1455497-K6F4016U6G-E F70000 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1455497-K6F4016U6G-EF70000 - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1455497-K6F4016U6G-EF70000
IT infrastructure Memory 1455497-K6F4016U6G-EF70000
Category: IT infrastructure Memory Win Source Part Number: 1455497-K6F4016U6G-E F70000 Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1455497-K6F4016U6G-EF70000
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1455497-K6F4016U6G-EF70000
Product Name IT infrastructure Memory
Memory Category SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V2556S100PF - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 5 ns
Density 4500 kbits
View Details
 - PC16550DV/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category FIFO
Package Type PLCC; PLCC44
View Details
Memory - CY14B104NA-ZSP45XI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4000 kbits
View Details
6 suppliers
Memory - AS5C4009 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details