Samsung Semiconductor Division Integrated Circuits (ICs) - Memory - Memory K6F2016U4E-EF70T

Description
SRAM ASYNC SLOW 2M 128Kx16 3.3V
Description
SRAM ASYNC SLOW 2M 128Kx16 3.3V

Suppliers

Company
Product
Description
Supplier Links
Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
K6F2016U4E-EF70T
Integrated Circuits (ICs) - Memory - Memory K6F2016U4E-EF70T
SRAM ASYNC SLOW 2M 128Kx16 3.3V

SRAM ASYNC SLOW 2M 128Kx16 3.3V

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category Memory Chips
Product Number K6F2016U4E-EF70T
Product Name Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882785P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882785P
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - 71T75802S166PFI - Lingto Electronic Limited
Rochester Electronics
Memory
71T75802S166PFI
Specs
Memory Category SRAM; SRAM Chip
Access Time 3.5 ns
Density 18000 kbits
View Details
- LP3913SQX-ADJ/NOPB - Rochester Electronics
Texas Instruments
LP3913SQX-ADJ/NOPB
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Memory - AS8ERLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8ERLC128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details