Samsung Semiconductor Division Integrated Circuits (ICs) - Memory - Memory K6F2016U4D-FF70T00

Description
SRAM ASYNC SLOW 2MB 128Kx16 3.3V
Description
SRAM ASYNC SLOW 2MB 128Kx16 3.3V

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
K6F2016U4D-FF70T00
Integrated Circuits (ICs) - Memory - Memory K6F2016U4D-FF70T00
SRAM ASYNC SLOW 2MB 128Kx16 3.3V

SRAM ASYNC SLOW 2MB 128Kx16 3.3V

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category Memory Chips
Product Number K6F2016U4D-FF70T00
Product Name Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V016SA20PHGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122202VYC - 5962F2122202VYC - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 512000 kbits
Package Type CG-FP-68
View Details
Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details