DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA Product overview: K4T51163QJ-BCE7 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4T51163QJ-BCE7 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Memory Chips |
| Product Number | 774-K4T51163QJ-BCE7 |
| Product Name | 1.8V Memory IC and Storage Component |
| Memory Category | DRAM Chip |
| Access Time | 0.4000 ns |
| Operating Temperature | 0 C (32 F) |
| Density | 536871 kbits |
