Samsung Electronics Co., Ltd. 1.8V Memory IC and Storage Component K4T51163QJ-BCE6

Description
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA Product overview: K4T51163QJ-BCE6 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4T51163QJ-BCE6 can be used for catalog matching and distributor lookup.
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Description
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA Product overview: K4T51163QJ-BCE6 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4T51163QJ-BCE6 can be used for catalog matching and distributor lookup.
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Product
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1.8V Memory IC and Storage Component - 774-K4T51163QJ-BCE6 - ERSAELECTRONICS PTE. LTD.
Singapore
1.8V Memory IC and Storage Component
774-K4T51163QJ-BCE6
1.8V Memory IC and Storage Component 774-K4T51163QJ-BCE6
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA Product overview: K4T51163QJ-BCE6 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4T51163QJ-BCE6 can be used for catalog matching and distributor lookup.

DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA Product overview: K4T51163QJ-BCE6 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4T51163QJ-BCE6 can be used for catalog matching and distributor lookup.

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Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Memory Chips
Product Number 774-K4T51163QJ-BCE6
Product Name 1.8V Memory IC and Storage Component
Memory Category DRAM Chip
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