Samsung Electronics Co., Ltd. Memory - DDR - K4F8E304HB-MGCJ K4F8E304HB-MGCJ

Description
Win Source Part Number: 942812-K4F8E304HB-MG CJ Series: * Categories: Memory
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Description
Win Source Part Number: 942812-K4F8E304HB-MG CJ Series: * Categories: Memory
Request a Quote

Suppliers

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Product
Description
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Memory - DDR - K4F8E304HB-MGCJ - 942812-K4F8E304HB-MGCJ - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - K4F8E304HB-MGCJ
942812-K4F8E304HB-MGCJ
Memory - DDR - K4F8E304HB-MGCJ 942812-K4F8E304HB-MGCJ
Win Source Part Number: 942812-K4F8E304HB-MG CJ Series: * Categories: Memory

Win Source Part Number: 942812-K4F8E304HB-MGCJ
Series: *
Categories: Memory

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8Gb 1.1v Memory IC and Storage Component - 774-K4F8E304HB-MGCJ - ERSAELECTRONICS PTE. LTD.
Singapore
8Gb 1.1v Memory IC and Storage Component
774-K4F8E304HB-MGCJ
8Gb 1.1v Memory IC and Storage Component 774-K4F8E304HB-MGCJ
LPDDR4 8Gb x32 3733 Mbps 1.1v 20 Product overview: K4F8E304HB-MGCJ from Samsung Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8Gb, 1.1v. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 8Gb, 1.1v, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4F8E304HB-MGCJ can be used for catalog matching and distributor lookup.

LPDDR4 8Gb x32 3733 Mbps 1.1v 20 Product overview: K4F8E304HB-MGCJ from Samsung Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8Gb, 1.1v. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 8Gb, 1.1v, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4F8E304HB-MGCJ can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - K4F8E304HB-MGCJ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 942812-K4F8E304HB-MGCJ 774-K4F8E304HB-MGCJ K4F8E304HB-MGCJ
Product Name Memory - DDR - K4F8E304HB-MGCJ 8Gb 1.1v Memory IC and Storage Component Memory
Memory Category Volatile; DRAM Chip
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