Samsung Electronics Co., Ltd. 8Gb 1.1v Memory IC and Storage Component K4F8E304HB-MGCJ

Description
LPDDR4 8Gb x32 3733 Mbps 1.1v 20 Product overview: K4F8E304HB-MGCJ from Samsung Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8Gb, 1.1v. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 8Gb, 1.1v, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4F8E304HB-MGCJ can be used for catalog matching and distributor lookup.
Request a Quote
Description
LPDDR4 8Gb x32 3733 Mbps 1.1v 20 Product overview: K4F8E304HB-MGCJ from Samsung Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8Gb, 1.1v. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 8Gb, 1.1v, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4F8E304HB-MGCJ can be used for catalog matching and distributor lookup.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
8Gb 1.1v Memory IC and Storage Component - 774-K4F8E304HB-MGCJ - ERSAELECTRONICS PTE. LTD.
Singapore
8Gb 1.1v Memory IC and Storage Component
774-K4F8E304HB-MGCJ
8Gb 1.1v Memory IC and Storage Component 774-K4F8E304HB-MGCJ
LPDDR4 8Gb x32 3733 Mbps 1.1v 20 Product overview: K4F8E304HB-MGCJ from Samsung Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8Gb, 1.1v. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 8Gb, 1.1v, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4F8E304HB-MGCJ can be used for catalog matching and distributor lookup.

LPDDR4 8Gb x32 3733 Mbps 1.1v 20 Product overview: K4F8E304HB-MGCJ from Samsung Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8Gb, 1.1v. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 8Gb, 1.1v, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4F8E304HB-MGCJ can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - DDR - K4F8E304HB-MGCJ - 942812-K4F8E304HB-MGCJ - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - K4F8E304HB-MGCJ
942812-K4F8E304HB-MGCJ
Memory - DDR - K4F8E304HB-MGCJ 942812-K4F8E304HB-MGCJ
Win Source Part Number: 942812-K4F8E304HB-MG CJ Series: * Categories: Memory

Win Source Part Number: 942812-K4F8E304HB-MGCJ
Series: *
Categories: Memory

Buy Now
Memory - K4F8E304HB-MGCJ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 774-K4F8E304HB-MGCJ 942812-K4F8E304HB-MGCJ K4F8E304HB-MGCJ
Product Name 8Gb 1.1v Memory IC and Storage Component Memory - DDR - K4F8E304HB-MGCJ Memory
Memory Category Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420767 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
 - 27LS00FM/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category SRAM Chip
Package Type CFP
View Details
3 suppliers