Samsung Electronics Co., Ltd. Memory - DDR - K4F6E3S4HM-MGCJ K4F6E3S4HM-MGCJ

Description
Win Source Part Number: 942764-K4F6E3S4HM-MG CJ Series: * Categories: Memory
Request a Quote Datasheet
Description
Win Source Part Number: 942764-K4F6E3S4HM-MG CJ Series: * Categories: Memory
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - DDR - K4F6E3S4HM-MGCJ - 942764-K4F6E3S4HM-MGCJ - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - K4F6E3S4HM-MGCJ
942764-K4F6E3S4HM-MGCJ
Memory - DDR - K4F6E3S4HM-MGCJ 942764-K4F6E3S4HM-MGCJ
Win Source Part Number: 942764-K4F6E3S4HM-MG CJ Series: * Categories: Memory

Win Source Part Number: 942764-K4F6E3S4HM-MGCJ
Series: *
Categories: Memory

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16Gb 1.1v Memory IC and Storage Component - 774-K4F6E3S4HM-MGCJ - ERSAELECTRONICS PTE. LTD.
Singapore
16Gb 1.1v Memory IC and Storage Component
774-K4F6E3S4HM-MGCJ
16Gb 1.1v Memory IC and Storage Component 774-K4F6E3S4HM-MGCJ
LPDDR4 16Gb x32 3733 Mbps 1.1v Product overview: K4F6E3S4HM-MGCJ from Samsung Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 16Gb, 1.1v. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 16Gb, 1.1v, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4F6E3S4HM-MGCJ can be used for catalog matching and distributor lookup.

LPDDR4 16Gb x32 3733 Mbps 1.1v Product overview: K4F6E3S4HM-MGCJ from Samsung Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 16Gb, 1.1v. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 16Gb, 1.1v, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4F6E3S4HM-MGCJ can be used for catalog matching and distributor lookup.

Supplier's Site
Integrated Circuits (ICs) - Memory - DDR SDRAM - K4F6E3S4HM-MGCJ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - DDR SDRAM
K4F6E3S4HM-MGCJ
Integrated Circuits (ICs) - Memory - DDR SDRAM K4F6E3S4HM-MGCJ
Integrated Circuits (ICs) - Memory - DDR SDRAM

Integrated Circuits (ICs) - Memory - DDR SDRAM

Supplier's Site
Memory >> DDR SDRAM - K4F6E3S4HM-MGCJ - LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Memory >> DDR SDRAM
K4F6E3S4HM-MGCJ
Memory >> DDR SDRAM K4F6E3S4HM-MGCJ
FBGA-200 DDR SDRAM ROHS

FBGA-200 DDR SDRAM ROHS

Supplier's Site Datasheet
Memory - K4F6E3S4HM-MGCJ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 942764-K4F6E3S4HM-MGCJ 774-K4F6E3S4HM-MGCJ K4F6E3S4HM-MGCJ K4F6E3S4HM-MGCJ K4F6E3S4HM-MGCJ
Product Name Memory - DDR - K4F6E3S4HM-MGCJ 16Gb 1.1v Memory IC and Storage Component Integrated Circuits (ICs) - Memory - DDR SDRAM Memory >> DDR SDRAM Memory
Memory Category Volatile; DRAM Chip DRAM Chip
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