LPDDR4 16Gb x32 3733 Mbps 1.1v Product overview: K4F6E3S4HM-MGCJ from Samsung Semiconductor is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 16Gb, 1.1v. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 16Gb, 1.1v, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4F6E3S4HM-MGCJ can be used for catalog matching and distributor lookup.
Win Source Part Number: 942764-K4F6E3S4HM-MG
Series: *
Categories: Memory
Integrated Circuits (ICs) - Memory - DDR SDRAM
FBGA-200 DDR SDRAM ROHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-K4F6E3S4HM-MGCJ | 942764-K4F6E3S4HM-MGCJ | K4F6E3S4HM-MGCJ | K4F6E3S4HM-MGCJ | K4F6E3S4HM-MGCJ |
| Product Name | 16Gb 1.1v Memory IC and Storage Component | Memory - DDR - K4F6E3S4HM-MGCJ | Memory | Integrated Circuits (ICs) - Memory - DDR SDRAM | Memory >> DDR SDRAM |
| Memory Category | Volatile; DRAM Chip | DRAM Chip |
