Samsung Semiconductor Division Integrated Circuits (ICs) - Memory - Memory K4B4G1646E-BYK000

Description
DDR3-1600 4GB (256MX16)1.25NS CL
Description
DDR3-1600 4GB (256MX16)1.25NS CL

Suppliers

Company
Product
Description
Supplier Links
Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
K4B4G1646E-BYK000
Integrated Circuits (ICs) - Memory - Memory K4B4G1646E-BYK000
DDR3-1600 4GB (256MX16)1.25NS CL

DDR3-1600 4GB (256MX16)1.25NS CL

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category Memory Chips
Product Number K4B4G1646E-BYK000
Product Name Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882548 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882548
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
FIFOs Memory - SN74ACT7200L20NP - Quarktwin Technology Ltd.
Texas Instruments
FIFOs Memory
SN74ACT7200L20NP
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Density 2 kbits
Package Type DIP; 28-DIP (0.300\", 7.62mm)
View Details
Memory - AS5C1005 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C1005
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 to 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 774-HYB39L128160AC-7.5 - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Memory IC and Storage Component
HYB39L128160AC-7.5
Specs
Memory Category DRAM Chip
View Details