Samsung Semiconductor Division Integrated Circuits (ICs) - Memory - Memory K4B4G1646E-BYK000

Description
DDR3-1600 4GB (256MX16)1.25NS CL
Description
DDR3-1600 4GB (256MX16)1.25NS CL

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
K4B4G1646E-BYK000
Integrated Circuits (ICs) - Memory - Memory K4B4G1646E-BYK000
DDR3-1600 4GB (256MX16)1.25NS CL

DDR3-1600 4GB (256MX16)1.25NS CL

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category Memory Chips
Product Number K4B4G1646E-BYK000
Product Name Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX4DD3K512M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details
Memory - 448-S80KS2563GABHA020-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category PSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256000 kbits
View Details
4 suppliers
Flash Memory - 1882749 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details