Samsung Semiconductor Division Integrated Circuits (ICs) - Memory - Memory K4B4G1646E-BYK000

Description
DDR3-1600 4GB (256MX16)1.25NS CL
Description
DDR3-1600 4GB (256MX16)1.25NS CL

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
K4B4G1646E-BYK000
Integrated Circuits (ICs) - Memory - Memory K4B4G1646E-BYK000
DDR3-1600 4GB (256MX16)1.25NS CL

DDR3-1600 4GB (256MX16)1.25NS CL

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Technical Specifications

  Acme Chip Technology Co., Limited
Product Category Memory Chips
Product Number K4B4G1646E-BYK000
Product Name Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; DRAM Chip
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