Samsung Semiconductor Division Integrated Circuits (ICs) - Memory - Memory K4B4G1646E-BYK000

Name: Integrated Circuits (ICs) - Memory - Memory
Brand: Samsung Semiconductor Division

Description

DDR3-1600 4GB (256MX16)1.25NS CL

Description

DDR3-1600 4GB (256MX16)1.25NS CL

Suppliers

Company

Product

Description

Supplier Links

Shenzhen, China

Integrated Circuits (ICs) - Memory - Memory
K4B4G1646E-BYK000

Integrated Circuits (ICs) - Memory - Memory K4B4G1646E-BYK000

DDR3-1600 4GB (256MX16)1.25NS CL

Supplier's Site

	Acme Chip Technology Co., Limited
Product Category	Memory Chips
Product Number	K4B4G1646E-BYK000
Product Name	Integrated Circuits (ICs) - Memory - Memory
Memory Category	Volatile; DRAM Chip

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Infineon Technologies AG

Micross Components, Inc.

Specs

Memory Category SDRAM; DRAM Chip

Operating Temperature -55 to 125 C (-67 to 257 F)

Density 256000 kbits

Texas Instruments

Specs

Memory Category SRAM Chip

3 suppliers

RS Components, Ltd.

Specs

Memory Category Flash

Density 32000 kbits

Package Type USON