Samsung Electronics Co., Ltd. 1.35V 1.5V Memory IC and Storage Component K4B4G1646D-BYK0

Description
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.35V/1.5V 96-Pin FBGA Product overview: K4B4G1646D-BYK0 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.35V, 1.5V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.35V, 1.5V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B4G1646D-BYK0 can be used for catalog matching and distributor lookup.
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Description
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.35V/1.5V 96-Pin FBGA Product overview: K4B4G1646D-BYK0 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.35V, 1.5V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.35V, 1.5V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B4G1646D-BYK0 can be used for catalog matching and distributor lookup.
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Suppliers

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1.35V 1.5V Memory IC and Storage Component - 774-K4B4G1646D-BYK0 - ERSAELECTRONICS PTE. LTD.
Singapore
1.35V 1.5V Memory IC and Storage Component
774-K4B4G1646D-BYK0
1.35V 1.5V Memory IC and Storage Component 774-K4B4G1646D-BYK0
DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.35V/1.5V 96-Pin FBGA Product overview: K4B4G1646D-BYK0 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.35V, 1.5V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.35V, 1.5V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B4G1646D-BYK0 can be used for catalog matching and distributor lookup.

DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.35V/1.5V 96-Pin FBGA Product overview: K4B4G1646D-BYK0 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.35V, 1.5V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.35V, 1.5V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B4G1646D-BYK0 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Memory Chips
Product Number 774-K4B4G1646D-BYK0
Product Name 1.35V 1.5V Memory IC and Storage Component
Memory Category DRAM Chip
Access Time 0.2250 ns
Operating Temperature 0 C (32 F)
Density 4000000 kbits
Number of Words 32000 k
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