DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V/1.5V 78-Pin FBGA Product overview: K4B4G0846E-BYMA0CV from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.35V, 1.5V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.35V, 1.5V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B4G0846E-BYMA0
Win Source Part Number: 940774-K4B4G0846E-BY
Series: *
Categories: Memory
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | 774-K4B4G0846E-BYMA0CV | 940774-K4B4G0846E-BYMA0CV |
| Product Name | 1.35V 1.5V Memory IC and Storage Component | Memory - DDR - K4B4G0846E-BYMA0CV |
| Memory Category | DRAM Chip | |
| Access Time | 0.1950 ns | |
| Operating Temperature | 0 C (32 F) | |
| Density | 4000000 kbits | |
| Number of Words | 64000 k |
