Samsung Electronics Co., Ltd. DRAM K4B4G0446D-BYK0

Description
Category: DRAM Win Source Part Number: 1446786-K4B4G0446D-B YK0 Manufacturer: Samsung
Request a Quote
Description
Category: DRAM Win Source Part Number: 1446786-K4B4G0446D-B YK0 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
DRAM - 1446786-K4B4G0446D-BYK0 - Win Source Electronics
Laguna Hills, CA, United States
Category: DRAM Win Source Part Number: 1446786-K4B4G0446D-B YK0 Manufacturer: Samsung

Category: DRAM
Win Source Part Number: 1446786-K4B4G0446D-BYK0
Manufacturer: Samsung

Buy Now
4Gb 1.35V Memory IC and Storage Component - 774-K4B4G0446D-BYK0 - ERSAELECTRONICS PTE. LTD.
Singapore
4Gb 1.35V Memory IC and Storage Component
774-K4B4G0446D-BYK0
4Gb 1.35V Memory IC and Storage Component 774-K4B4G0446D-BYK0
DDR3-1600 1Gx4 (4Gb) 1.35V Product overview: K4B4G0446D-BYK0 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4Gb, 1.35V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 4Gb, 1.35V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B4G0446D-BYK0 can be used for catalog matching and distributor lookup.

DDR3-1600 1Gx4 (4Gb) 1.35V Product overview: K4B4G0446D-BYK0 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4Gb, 1.35V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 4Gb, 1.35V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B4G0446D-BYK0 can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Memory Chips Memory Chips
Product Number 1446786-K4B4G0446D-BYK0 774-K4B4G0446D-BYK0
Product Name DRAM 4Gb 1.35V Memory IC and Storage Component
Unlock Full Specs
to access all available technical data

Similar Products

 - 27S19APC - Rochester Electronics
Rochester Electronics
Specs
Memory Category PROM
Density 0 kbits
Package Type DIP; PDIP16
View Details
4 suppliers
Memory - 625432-0030 03 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882864 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - SMJ28F010B - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 120 to 200 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details