Samsung Electronics Co., Ltd. 2Gb 1.35V Memory IC and Storage Component K4B2G1646F-BYMA000

Description
DDR3-1866 128Mx16 (2Gb) 1.35V Product overview: K4B2G1646F-BYMA000 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2Gb, 1.35V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2Gb, 1.35V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B2G1646F-BYMA0 00 can be used for catalog matching and distributor lookup.
Request a Quote
Description
DDR3-1866 128Mx16 (2Gb) 1.35V Product overview: K4B2G1646F-BYMA000 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2Gb, 1.35V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2Gb, 1.35V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B2G1646F-BYMA0 00 can be used for catalog matching and distributor lookup.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
2Gb 1.35V Memory IC and Storage Component - 774-K4B2G1646F-BYMA000 - ERSAELECTRONICS PTE. LTD.
Singapore
2Gb 1.35V Memory IC and Storage Component
774-K4B2G1646F-BYMA000
2Gb 1.35V Memory IC and Storage Component 774-K4B2G1646F-BYMA000
DDR3-1866 128Mx16 (2Gb) 1.35V Product overview: K4B2G1646F-BYMA000 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2Gb, 1.35V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2Gb, 1.35V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B2G1646F-BYMA0 00 can be used for catalog matching and distributor lookup.

DDR3-1866 128Mx16 (2Gb) 1.35V Product overview: K4B2G1646F-BYMA000 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2Gb, 1.35V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2Gb, 1.35V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B2G1646F-BYMA000 can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - DDR - K4B2G1646F-BYMA000 - 941256-K4B2G1646F-BYMA000 - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - K4B2G1646F-BYMA000
941256-K4B2G1646F-BYMA000
Memory - DDR - K4B2G1646F-BYMA000 941256-K4B2G1646F-BYMA000
Win Source Part Number: 941256-K4B2G1646F-BY MA000 Series: * Categories: Memory

Win Source Part Number: 941256-K4B2G1646F-BYMA000
Series: *
Categories: Memory

Buy Now

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 774-K4B2G1646F-BYMA000 941256-K4B2G1646F-BYMA000
Product Name 2Gb 1.35V Memory IC and Storage Component Memory - DDR - K4B2G1646F-BYMA000
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882660 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
DIP Memory IC and Storage Component - 2020-NM27C010N200 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category EPROM; Non-Volatile
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers
Memory - 27C256-25/SO277 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 250 ns
Density 256 kbits
View Details
Memory - 28276183 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers