DDR3-1600 256Mx8 (2Gb) 1.35V Product overview: K4B2G0846Q-HYK0 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2Gb, 1.35V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2Gb, 1.35V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B2G0846Q-HYK0 can be used for catalog matching and distributor lookup.
Win Source Part Number: 941229-K4B2G0846Q-HY
Series: *
Categories: Memory
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | 774-K4B2G0846Q-HYK0 | 941229-K4B2G0846Q-HYK0 |
| Product Name | 2Gb 1.35V Memory IC and Storage Component | Memory - DDR - K4B2G0846Q-HYK0 |
