Samsung Electronics Co., Ltd. Memory - DDR - K4B2G0846C-HYH9 K4B2G0846C-HYH9

Win Source Part Number: 941207-K4B2G0846C-HYH9
Series: *
Categories: Memory

DDR3-1333 256Mx8 (2Gb) 1.35V Product overview: K4B2G0846C-HYH9 from SAMSUNG is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2Gb, 1.35V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2Gb, 1.35V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-K4B2G0846C-HYH9 can be used for catalog matching and distributor lookup.