Samsung Semiconductor Division Integrated Circuits (ICs) - Memory - Memory K4B1G1646I-BYMA000

Description
DDR3-1866 1GB (64MX16)1.07NS CL1
Description
DDR3-1866 1GB (64MX16)1.07NS CL1

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
K4B1G1646I-BYMA000
Integrated Circuits (ICs) - Memory - Memory K4B1G1646I-BYMA000
DDR3-1866 1GB (64MX16)1.07NS CL1

DDR3-1866 1GB (64MX16)1.07NS CL1

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category Memory Chips
Product Number K4B1G1646I-BYMA000
Product Name Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memories - PSRAM (Pseudostatic RAM) - S27KL0642GABHI020 - S27KL0642GABHI020 - Infineon Technologies AG
Specs
Memory Category SRAM Chip
Access Time 35 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
6 suppliers
CD40105B CMOS 4-Bit-by-16-Word FIFO Register - CD40105BE - Texas Instruments
Specs
Memory Category FIFO
Package Type PDIP,SO,TSSOP
View Details
5 suppliers
5V Memory IC and Storage Component - 774-MT5C1008F45L/883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -40 C (-40 F)
Density 1000 kbits
View Details
2 suppliers
 - 27S181PC - Rochester Electronics
Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; PDIP24
View Details
4 suppliers