These MLCCs can be used in high frequency. They consist of a ceramic body and an electrode made of copper and plated with nickel and tin.
High Q and low ESR characteristics allow application of the products in high frequencies. In particular, as they suffer no change in capacitance due to temperature or passage of time, and have high efficiency and less power consumption, they are mainly used for impedance matching in RF circuits.
General Features
High Q and low ESR in high frequency range
Tight tolerance available
High efficiency and low power consumption in RF circuit
Can be applied to power amplifier module for base-station and GHz range communications
Application
Base Station
Set Top Box
Wireless Equipment
PS
Bluetooth
Why Samsung
Features of High-frequency MLCCs
Maintains a C value that is predefined for a high-frequency band to ensure the products’ utilization in an RF band of 300 MHz or higher As the products are mainly used for impedance matching, the Q characteristics were improved by optimizing the internal materials of individual technologies, and by optimizing designing and processing.
Code
EIA Code
Rated Voltage
Dimension(mm)
L
W
T
BW(Band Width)
02
01005
25
0.4±0.02
0.2±0.02
0.2±0.02
0.07~0.14
03
0201
25/50
0.6±0.03
0.3±0.03
0.3±0.03
0.15±0.05
05
0402
50
1.00±0.05
0.50±0.05
0.50±0.05
0.25±0.10
10
0603
50/100
1.60±0.10
0.80±0.10
0.80±0.10
0.30±0.20
250
1.60±0.15
0.80±0.15
0.65±0.10
0.30±0.20
21
0805
250
2.00±0.15
1.25±0.15
0.585±0.15
0.50+0.20/-0.30
Sectional View
Realizes capacitance by layering dielectrics and internal electrodes
These MLCCs can be used in high frequency. They consist of a ceramic body and an electrode made of copper and plated with nickel and tin.
High Q and low ESR characteristics allow application of the products in high frequencies. In particular, as they suffer no change in capacitance due to temperature or passage of time, and have high efficiency and less power consumption, they are mainly used for impedance matching in RF circuits.
General Features
- High Q and low ESR in high frequency range
- Tight tolerance available
- High efficiency and low power consumption in RF circuit
- Can be applied to power amplifier module for base-station and GHz range communications
Application
- Base Station
- Set Top Box
- Wireless Equipment
- PS
- Bluetooth
Why Samsung
Features of High-frequency MLCCs
Maintains a C value that is predefined for a high-frequency band to ensure the products’ utilization in an RF band of 300 MHz or higher
As the products are mainly used for impedance matching, the Q characteristics were improved by optimizing the internal materials of individual technologies, and by optimizing designing and processing.
| Code | EIA
Code | Rated
Voltage | Dimension(mm) |
|---|
| L | W | T | BW(Band Width) |
|---|
| 02 | 01005 | 25 | 0.4±0.02 | 0.2±0.02 | 0.2±0.02 | 0.07~0.14 |
| 03 | 0201 | 25/50 | 0.6±0.03 | 0.3±0.03 | 0.3±0.03 | 0.15±0.05 |
| 05 | 0402 | 50 | 1.00±0.05 | 0.50±0.05 | 0.50±0.05 | 0.25±0.10 |
| 10 | 0603 | 50/100 | 1.60±0.10 | 0.80±0.10 | 0.80±0.10 | 0.30±0.20 |
| 250 | 1.60±0.15 | 0.80±0.15 | 0.65±0.10 | 0.30±0.20 |
| 21 | 0805 | 250 | 2.00±0.15 | 1.25±0.15 | 0.585±0.15 | 0.50+0.20/-0.30 |
Sectional View
Realizes capacitance by layering dielectrics and internal electrodes
