Samsung Electronics Co., Ltd. IT infrastructure Memory 254827_K9F1G08U0A-PCB0

Description
Category: IT infrastructure Memory Win Source Part Number: 1453490-254827_K9F1G 08U0A-PCB0 Manufacturer: Samsung
  • IT infrastructure Memory - 1453490-254827_K9F1G08U0A-PCB0 - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1453490-254827_K9F1G 08U0A-PCB0 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1453490-254827_K9F1G08U0A-PCB0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1453490-254827_K9F1G08U0A-PCB0
IT infrastructure Memory 1453490-254827_K9F1G08U0A-PCB0
Category: IT infrastructure Memory Win Source Part Number: 1453490-254827_K9F1G 08U0A-PCB0 Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1453490-254827_K9F1G08U0A-PCB0
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1453490-254827_K9F1G08U0A-PCB0
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8ER128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-9232406MYA - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
5962-9232406MYA
Specs
Memory Category NVSRAM; NVSRAM; SRAM Chip
Access Time 35 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Memory - PAL16R6BJ/883 - Quarktwin Technology Ltd.
Texas Instruments
Memory
PAL16R6BJ/883
View Details
2 suppliers
Memory - S25FL128SAGMFV010 - Lingto Electronic Limited
Rochester Electronics
Memory
S25FL128SAGMFV010
Specs
Memory Category Flash; Flash
Density 128000 kbits
View Details