Samsung Electronics Co., Ltd. IT infrastructure Memory 241157_K9F1208U0A-YCB0

Description
Category: IT infrastructure Memory Win Source Part Number: 1453527-241157_K9F12 08U0A-YCB0 Manufacturer: Samsung
  • IT infrastructure Memory - 1453527-241157_K9F1208U0A-YCB0 - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1453527-241157_K9F12 08U0A-YCB0 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1453527-241157_K9F1208U0A-YCB0 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1453527-241157_K9F1208U0A-YCB0
IT infrastructure Memory 1453527-241157_K9F1208U0A-YCB0
Category: IT infrastructure Memory Win Source Part Number: 1453527-241157_K9F12 08U0A-YCB0 Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1453527-241157_K9F1208U0A-YCB0
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1453527-241157_K9F1208U0A-YCB0
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 4720BDM - Quarktwin Technology Ltd.
Rochester Electronics
Memory
4720BDM
View Details
2 suppliers
Memory - AS8F512K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8F512K32
Specs
Memory Category FLASH
Access Time 70 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Texas Instruments
Memory
S29GL032N11TFIV10
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - IS29GL256S-10DHB020 - Lingto Electronic Limited
Infineon Technologies AG
Memory
IS29GL256S-10DHB020
Specs
Memory Category Flash; Flash
Access Time 100 ns
Density 256000 kbits
View Details
2 suppliers