Samsung Electronics Co., Ltd. IT infrastructure Memory 241157_K9F1208U0A-YCB0

Description
Category: IT infrastructure Memory Win Source Part Number: 1453527-241157_K9F12 08U0A-YCB0 Manufacturer: Samsung
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1453527-241157_K9F12 08U0A-YCB0 Manufacturer: Samsung
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1453527-241157_K9F1208U0A-YCB0 - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1453527-241157_K9F1208U0A-YCB0
IT infrastructure Memory 1453527-241157_K9F1208U0A-YCB0
Category: IT infrastructure Memory Win Source Part Number: 1453527-241157_K9F12 08U0A-YCB0 Manufacturer: Samsung

Category: IT infrastructure Memory
Win Source Part Number: 1453527-241157_K9F1208U0A-YCB0
Manufacturer: Samsung

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1453527-241157_K9F1208U0A-YCB0
Product Name IT infrastructure Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - S25FL032P0XNFI001M - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 32000 kbits
View Details
2 suppliers
Memory - 28C64AX-15B/UC - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 150 ns
Density 64 kbits
View Details
Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - AS4SD32M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details