ROHM Semiconductor USA, LLC FET, MOSFET Arrays VT6M1T2CR

Description
Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6
Request a Quote Datasheet
Description
Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - VT6M1T2CRCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
VT6M1T2CRCT-ND
FET, MOSFET Arrays VT6M1T2CRCT-ND
Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6

Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6

Buy Now Datasheet
FET, MOSFET Arrays - VT6M1T2CRTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
VT6M1T2CRTR-ND
FET, MOSFET Arrays VT6M1T2CRTR-ND
Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6

Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6

Buy Now Datasheet
FET, MOSFET Arrays - VT6M1T2CRDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
VT6M1T2CRDKR-ND
FET, MOSFET Arrays VT6M1T2CRDKR-ND
Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6

Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6

Buy Now Datasheet
FET, MOSFET Arrays - VT6M1T2CR - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
VT6M1T2CR
FET, MOSFET Arrays VT6M1T2CR
MOSFET N/P-CH 20V 0.1A VMT6

MOSFET N/P-CH 20V 0.1A VMT6

Supplier's Site Datasheet
Singapore
20V 0.1A MOSFET Transistor
289-VT6M1T2CR
20V 0.1A MOSFET Transistor 289-VT6M1T2CR
MOSFET N/P-CH 20V 0.1A VMT6 Product overview: VT6M1T2CR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-VT6M1T2CR can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 20V 0.1A VMT6 Product overview: VT6M1T2CR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-VT6M1T2CR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VT6M1T2CR - 1117771-VT6M1T2CR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VT6M1T2CR
1117771-VT6M1T2CR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VT6M1T2CR 1117771-VT6M1T2CR
Manufacturer: Rohm Semiconductor Win Source Part Number: 1117771-VT6M1T2CR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.2V Drive Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VMT6 Maximum Power Dissipation: 120mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 100mA Gate-Source Threshold Voltage: 1V @ 100μA Max Input Capacitance: 7.1pF @ 10V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 100mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1117771-VT6M1T2CR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate, 1.2V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VMT6
Maximum Power Dissipation: 120mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 100mA
Gate-Source Threshold Voltage: 1V @ 100μA
Max Input Capacitance: 7.1pF @ 10V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 100mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VT6M1T2CR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VT6M1T2CR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VT6M1T2CR
MOSFET N/P-CH 20V 0.1A VMT6

MOSFET N/P-CH 20V 0.1A VMT6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 1.2V Drive Nch+Pch MOSFET

MOSFET 1.2V Drive Nch+Pch MOSFET

Buy Now Datasheet
Mosfet, N& P-Ch, 20V, Vmt6; Transistor Polarity Rohm - 10AC9375 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N& P-Ch, 20V, Vmt6; Transistor Polarity Rohm
10AC9375
Mosfet, N& P-Ch, 20V, Vmt6; Transistor Polarity Rohm 10AC9375
MOSFET, N& P-CH, 20V, VMT6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes

MOSFET, N& P-CH, 20V, VMT6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number VT6M1T2CRCT-ND VT6M1T2CR 289-VT6M1T2CR 1117771-VT6M1T2CR VT6M1T2CR VT6M1T2CR 10AC9375
Product Name FET, MOSFET Arrays FET, MOSFET Arrays 20V 0.1A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - VT6M1T2CR Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N& P-Ch, 20V, Vmt6; Transistor Polarity Rohm
Package Type 6-SMD, Flat Leads 6-SMD, Flat Leads Tape & Reel (TR) SOT3; VMT6 TO-3
Polarity P-Channel; N and P-Channel N-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts 20 volts
IDSS 100 milliamps 100 milliamps
Unlock Full Specs
to access all available technical data