MOSFET N/P-CH 20V 0.1A VMT6 Product overview: VT6M1T2CR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-VT6M1T2CR can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1117771-VT6M1T2CR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate, 1.2V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VMT6
Maximum Power Dissipation: 120mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 100mA
Gate-Source Threshold Voltage: 1V @ 100μA
Max Input Capacitance: 7.1pF @ 10V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 100mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6
Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6
Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6
MOSFET N/P-CH 20V 0.1A VMT6
MOSFET N/P-CH 20V 0.1A VMT6
MOSFET 1.2V Drive Nch+Pch MOSFET
MOSFET, N& P-CH, 20V, VMT6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-VT6M1T2CR | 1117771-VT6M1T2CR | VT6M1T2CRCT-ND | VT6M1T2CR | VT6M1T2CR | VT6M1T2CR | 10AC9375 |
| Product Name | 20V 0.1A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VT6M1T2CR | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N& P-Ch, 20V, Vmt6; Transistor Polarity Rohm |
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| Transconductance | 1.00E-5 to 1.20E-4 kS | ||||||
| PD | 150 milliwatts | 120 milliwatts |
