ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6U37TR US6U37TR

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1116730-US6U37TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TUMT6 Dimension: 6-SMD, Flat Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 1mA Max Gate Charge: 2.2nC @ 4.5V Max Input Capacitance: 80pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 240 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1116730-US6U37TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TUMT6 Dimension: 6-SMD, Flat Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 1mA Max Gate Charge: 2.2nC @ 4.5V Max Input Capacitance: 80pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 240 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6U37TR - 1116730-US6U37TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6U37TR
1116730-US6U37TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6U37TR 1116730-US6U37TR
Manufacturer: Rohm Semiconductor Win Source Part Number: 1116730-US6U37TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TUMT6 Dimension: 6-SMD, Flat Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 1mA Max Gate Charge: 2.2nC @ 4.5V Max Input Capacitance: 80pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 240 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1116730-US6U37TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TUMT6
Dimension: 6-SMD, Flat Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 1mA
Max Gate Charge: 2.2nC @ 4.5V
Max Input Capacitance: 80pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 240 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 846-US6U37TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-US6U37TR-ND
Single FETs, MOSFETs 846-US6U37TR-ND
MOSFET N-CH 30V 1.5A TUMT6

MOSFET N-CH 30V 1.5A TUMT6

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
US6U37TR
MOSFET US6U37TR
MOSFET N Chan30V+/-1.5A 2.5V Drive

MOSFET N Chan30V+/-1.5A 2.5V Drive

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - US6U37TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
US6U37TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs US6U37TR
MOSFET N-CH 30V 1.5A TUMT6

MOSFET N-CH 30V 1.5A TUMT6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1116730-US6U37TR 846-US6U37TR-ND US6U37TR US6U37TR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6U37TR Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 1000 milliwatts
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