ROHM Semiconductor USA, LLC Single FETs, MOSFETs US6U37TR

Description
MOSFET N-CH 30V 1.5A TUMT6
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Description
MOSFET N-CH 30V 1.5A TUMT6
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 846-US6U37TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-US6U37TR-ND
Single FETs, MOSFETs 846-US6U37TR-ND
MOSFET N-CH 30V 1.5A TUMT6

MOSFET N-CH 30V 1.5A TUMT6

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6U37TR - 1116730-US6U37TR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6U37TR
1116730-US6U37TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6U37TR 1116730-US6U37TR
Manufacturer: Rohm Semiconductor Win Source Part Number: 1116730-US6U37TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TUMT6 Dimension: 6-SMD, Flat Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 1mA Max Gate Charge: 2.2nC @ 4.5V Max Input Capacitance: 80pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 240 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1116730-US6U37TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TUMT6
Dimension: 6-SMD, Flat Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 1mA
Max Gate Charge: 2.2nC @ 4.5V
Max Input Capacitance: 80pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 240 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - US6U37TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
US6U37TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs US6U37TR
MOSFET N-CH 30V 1.5A TUMT6

MOSFET N-CH 30V 1.5A TUMT6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
US6U37TR
MOSFET US6U37TR
MOSFET N Chan30V+/-1.5A 2.5V Drive

MOSFET N Chan30V+/-1.5A 2.5V Drive

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 846-US6U37TR-ND 1116730-US6U37TR US6U37TR US6U37TR
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6U37TR Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type 6-SMD, Flat Leads SOT3; TUMT6 6-SMD, Flat Leads
V(BR)DSS 30 volts
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