ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6M2TR US6M2TR

Manufacturer: Rohm Semiconductor
Win Source Part Number: 036149-US6M2TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TUMT6
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V, 20V
Continuous Drain Current at 25°C: 1.5A, 1A
Gate-Source Threshold Voltage: 1.5V @ 1mA
Max Gate Charge: 2.2nC @ 4.5V
Max Input Capacitance: 80pF @ 10V
Maximum Rds On at Id,Vgs: 240 mOhm @ 1.5A, 4.5V
Alternative Parts (Cross-Reference): SSM6L12TU(TE85L,F); SSM6L12TU; US6M2;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient

MOSFET N/P-CH 30V/20V 1.5A TUMT6 Product overview: US6M2TR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20V, 1.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-US6M2TR can be used for catalog matching and distributor lookup.

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Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W Surface Mount TUMT6

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