Manufacturer: Rohm Semiconductor
Win Source Part Number: 100648-US6M11TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: UMT6
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 20V, 12V
Continuous Drain Current at 25°C: 1.5A, 1.3A
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 1.8nC @ 4.5V
Max Input Capacitance: 110pF @ 10V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Mosfet Array N and P-Channel 20V, 12V 1.5A, 1.3A 1W Surface Mount TUMT6
Mosfet Array N and P-Channel 20V, 12V 1.5A, 1.3A 1W Surface Mount TUMT6
Mosfet Array N and P-Channel 20V, 12V 1.5A, 1.3A 1W Surface Mount TUMT6
MOSFET N/P-CH 20V/12V TUMT6
MOSFET N/P-CH 20V/12V TUMT6 Product overview: US6M11TR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 12V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 12V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-US6M11TR can be used for catalog matching and distributor lookup.
MOSFET, N& P-CH, 20V, TUMT; Transistor Polarity:N and P Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
MOSFET TRANS MOSFET N/P-CH 20V/12V 6PIN
MOSFET N/P-CH 20V/12V TUMT6
1W 1V@1mA 1PCSN-Channel&1PCSP-
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 100648-US6M11TR | US6M11DKR-ND | US6M11TR | 289-US6M11TR | 10AC9344 | US6M11TR | US6M11TR | US6M11TR |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6M11TR | FET, MOSFET Arrays | FET, MOSFET Arrays | 20V 12V MOSFET Transistor | Mosfet, N& P-Ch, 20V, Tumt; Transistor Polarity Rohm | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | P-Channel; N and P-Channel | N-Channel; P-Channel | N-Channel | ||||
| V(BR)DSS | 20 to 12 volts | 20 to 12 volts | 20 volts | |||||
| PD | 1000 milliwatts | 1 milliwatts | 1000 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | |||||
| Package Type | SOT3; UMT6 | 6-SMD, Flat Leads | 6-SMD, Flat Leads | Tape & Reel (TR) | TO-3 |
