Manufacturer: Rohm Semiconductor
Win Source Part Number: 101113-US6K2TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TUMT6
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.4A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 2nC @ 5V
Max Input Capacitance: 70pF @ 10V
Maximum Rds On at Id,Vgs: 240 mOhm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
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| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 101113-US6K2TR | US6K2TR | US6K2DKR-ND | US6K2TR | US6K2TR | US6K2TR |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6K2TR | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| PD | 1000 milliwatts | 1000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | ||||
| Package Type | SOT3; TUMT6 | 6-SMD, Flat Leads | 6-SMD, Flat Leads |
