MOSFET 2N-CH 30V 1.4A TUMT6
Manufacturer: Rohm Semiconductor
Win Source Part Number: 101113-US6K2TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TUMT6
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.4A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 2nC @ 5V
Max Input Capacitance: 70pF @ 10V
Maximum Rds On at Id,Vgs: 240 mOhm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 30V 1.4A 1W Surface Mount TUMT6
Mosfet Array 2 N-Channel (Dual) 30V 1.4A 1W Surface Mount TUMT6
Mosfet Array 2 N-Channel (Dual) 30V 1.4A 1W Surface Mount TUMT6
30V 1.4A 240mΩ@1.4A,10V 1W 2.5V@1mA 2 N-Channel SOT-363T MOSFETs ROHS
MOSFET 2N-CH 30V 1.4A TUMT6
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | US6K2TR | 101113-US6K2TR | US6K2DKR-ND | US6K2TR | US6K2TR | US6K2TR |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6K2TR | FET, MOSFET Arrays | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| IDSS | 1400 milliamps | |||||
| TJ | 150 C (302 F) | 150 C (302 F) |
