Mosfet Array 2 N-Channel (Dual) 30V 1.5A 1W Surface Mount TUMT6
Mosfet Array 2 N-Channel (Dual) 30V 1.5A 1W Surface Mount TUMT6
Mosfet Array 2 N-Channel (Dual) 30V 1.5A 1W Surface Mount TUMT6
MOSFET 2N-CH 30V 1.5A TUMT6 Product overview: US6K1TR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-US6K1TR can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 043495-US6K1TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: US6K1
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TUMT6
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.5A
Gate-Source Threshold Voltage: 1.5V @ 1mA
Max Gate Charge: 2.2nC @ 4.5V
Max Input Capacitance: 80pF @ 10V
Maximum Rds On at Id,Vgs: 240 mOhm @ 1.5A, 4.5V
Introduction Date: December 19, 2003
ECCN: EAR99
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
MOSFET, DUAL, NN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:1W; RoHS Compliant: Yes
MOSFET 2N-CH 30V 1.5A TUMT6
MOSFET 2N-CH 30V 1.5A TUMT6
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | US6K1CT-ND | 289-US6K1TR | 043495-US6K1TR | 74M5113 | US6K1TR | 687-US6K1TR | US6K1TR |
| Product Name | FET, MOSFET Arrays | 30V 1.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6K1TR | Mosfet, Dual, Nn; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 2N-CH 30V 1.5A TUMT6 | MOSFET |
| Package Type | 6-SMD, Flat Leads | Tape & Reel (TR) | SOT3; TUMT6 | TO-3 | |||
| Polarity | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| Transconductance | 0.0015 kS | ||||||
| PD | 1 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts |
