MOSFET 2P-CH 12V 1.3A TUMT6 Product overview: US6J11TR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 1.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-US6J11TR can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 12V 1.3A 320mW Surface Mount TUMT6
Mosfet Array 2 P-Channel (Dual) 12V 1.3A 320mW Surface Mount TUMT6
Mosfet Array 2 P-Channel (Dual) 12V 1.3A 320mW Surface Mount TUMT6
MOSFET 2P-CH 12V 1.3A TUMT6
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1116727-US6J11TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: UMT6
Maximum Power Dissipation: 320mW
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.3A
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 2.4nC @ 4.5V
Max Input Capacitance: 290pF @ 6V
Maximum Rds On at Id,Vgs: 260 mOhm @ 1.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET, DUAL P-CH, -12V, TUMT; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
12V 1.3A 1.06Ω@1.5V,200mA 320mW 1V@1mA 2 P-Channel SOT-363T MOSFETs ROHS
MOSFET TRANS MOSFET PCH 12V 1.3A 6PIN
MOSFET 2P-CH 12V 1.3A TUMT6
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-US6J11TR | US6J11TR-ND | US6J11TR | 1116727-US6J11TR | 10AC9342 | US6J11TR | US6J11TR | US6J11TR |
| Product Name | 12V 1.3A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - US6J11TR | Mosfet, Dual P-Ch, -12V, Tumt; Transistor Polarity Rohm | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 0.0014 kS | |||||||
| PD | 1 milliwatts | 320 milliwatts | 320 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
