ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - UM6K1NTN UM6K1NTN

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 035973-UM6K1NTN Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: UM6K1N Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: UMT6 Maximum Power Dissipation: 150mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100mA Gate-Source Threshold Voltage: 1.5V @ 100μA Max Input Capacitance: 13pF @ 5V Maximum Rds On at Id,Vgs: 8 Ohm @ 10mA, 4V Alternative Parts (Cross-Reference): UM6K1N-TP; PMGD8000LN,115; PMGD8000LN; Introduction Date: September 11, 1998 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 035973-UM6K1NTN Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: UM6K1N Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: UMT6 Maximum Power Dissipation: 150mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100mA Gate-Source Threshold Voltage: 1.5V @ 100μA Max Input Capacitance: 13pF @ 5V Maximum Rds On at Id,Vgs: 8 Ohm @ 10mA, 4V Alternative Parts (Cross-Reference): UM6K1N-TP; PMGD8000LN,115; PMGD8000LN; Introduction Date: September 11, 1998 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UM6K1NTN - 035973-UM6K1NTN - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UM6K1NTN
035973-UM6K1NTN
TRANSISTORS - Transistors - FETs, MOSFETs - RF - UM6K1NTN 035973-UM6K1NTN
Manufacturer: Rohm Semiconductor Win Source Part Number: 035973-UM6K1NTN Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: UM6K1N Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: UMT6 Maximum Power Dissipation: 150mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100mA Gate-Source Threshold Voltage: 1.5V @ 100μA Max Input Capacitance: 13pF @ 5V Maximum Rds On at Id,Vgs: 8 Ohm @ 10mA, 4V Alternative Parts (Cross-Reference): UM6K1N-TP; PMGD8000LN,115; PMGD8000LN; Introduction Date: September 11, 1998 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: Rohm Semiconductor
Win Source Part Number: 035973-UM6K1NTN
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: UM6K1N
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: UMT6
Maximum Power Dissipation: 150mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 100mA
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Input Capacitance: 13pF @ 5V
Maximum Rds On at Id,Vgs: 8 Ohm @ 10mA, 4V
Alternative Parts (Cross-Reference): UM6K1N-TP; PMGD8000LN,115; PMGD8000LN;
Introduction Date: September 11, 1998
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - UM6K1NTN - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
UM6K1NTN
FET, MOSFET Arrays UM6K1NTN
MOSFET 2N-CH 30V .1A SOT-363

MOSFET 2N-CH 30V .1A SOT-363

Supplier's Site Datasheet
FET, MOSFET Arrays - UM6K1NTNCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
UM6K1NTNCT-ND
FET, MOSFET Arrays UM6K1NTNCT-ND
Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount UMT6

Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount UMT6

Buy Now Datasheet
FET, MOSFET Arrays - UM6K1NTNTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
UM6K1NTNTR-ND
FET, MOSFET Arrays UM6K1NTNTR-ND
Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount UMT6

Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount UMT6

Buy Now Datasheet
FET, MOSFET Arrays - UM6K1NTNDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
UM6K1NTNDKR-ND
FET, MOSFET Arrays UM6K1NTNDKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount UMT6

Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount UMT6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UM6K1NTN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UM6K1NTN
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UM6K1NTN
MOSFET 2N-CH 30V 0.1A UMT6

MOSFET 2N-CH 30V 0.1A UMT6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
UM6K1NTN
MOSFET UM6K1NTN
MOSFET 2N-CH 30V .1A SOT-363

MOSFET 2N-CH 30V .1A SOT-363

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 035973-UM6K1NTN UM6K1NTN UM6K1NTNCT-ND UM6K1NTN UM6K1NTN
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - UM6K1NTN FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 30 volts 30 volts
PD 150 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Unlock Full Specs
to access all available technical data