ROHM Semiconductor USA, LLC FET, MOSFET Arrays UM6K1NTN

Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount UMT6

Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount UMT6

Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount UMT6

MOSFET 2N-CH 30V 0.1A UMT6 Product overview: UM6K1NTN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-UM6K1NTN can be used for catalog matching and distributor lookup.

Manufacturer: Rohm Semiconductor
Win Source Part Number: 035973-UM6K1NTN
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: UM6K1N
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: UMT6
Maximum Power Dissipation: 150mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 100mA
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Input Capacitance: 13pF @ 5V
Maximum Rds On at Id,Vgs: 8 Ohm @ 10mA, 4V
Alternative Parts (Cross-Reference): UM6K1N-TP; PMGD8000LN,115; PMGD8000LN;
Introduction Date: September 11, 1998
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient