ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - TT8J21TR TT8J21TR

Manufacturer: Rohm Semiconductor
Win Source Part Number: 098615-TT8J21TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-TSST
Maximum Power Dissipation: 650mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.5A
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 1270pF @ 10V
Maximum Rds On at Id,Vgs: 68 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Mosfet Array 2 P-Channel (Dual) 20V 2.5A 650mW Surface Mount 8-TSST

Mosfet Array 2 P-Channel (Dual) 20V 2.5A 650mW Surface Mount 8-TSST

MOSFET 2P-CH 20V 2.5A 8TSST Product overview: TT8J21TR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-TT8J21TR can be used for catalog matching and distributor lookup.