Manufacturer: Rohm Semiconductor
Win Source Part Number: 098615-TT8J21TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-TSST
Maximum Power Dissipation: 650mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.5A
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 12nC @ 4.5V
Max Input Capacitance: 1270pF @ 10V
Maximum Rds On at Id,Vgs: 68 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
Mosfet Array 2 P-Channel (Dual) 20V 2.5A 650mW Surface Mount 8-TSST
Mosfet Array 2 P-Channel (Dual) 20V 2.5A 650mW Surface Mount 8-TSST
MOSFET 2P-CH 20V 2.5A TSST8
MOSFET P Chan-20V-2.5A Mid-PowerSwitching
MOSFET 2P-CH 20V 2.5A 8TSST
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 098615-TT8J21TR | TT8J21CT-ND | TT8J21TR | TT8J21TR | TT8J21TR |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TT8J21TR | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | |||
| V(BR)DSS | 20 volts | 20 volts | |||
| PD | 650 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) |
