Manufacturer: Rohm Semiconductor
Win Source Part Number: 123519-SP8M8TB
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A, 4.5A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 7.2nC @ 5V
Max Input Capacitance: 520pF @ 10V
Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 30V 6A, 4.5A 2W Surface Mount 8-SOP
MOSFET N/P-CH 30V 6A/4.5A 8SOP Product overview: SP8M8TB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, 4.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SP8M8TB can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 30V 6A/4.5A 8SOP
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 123519-SP8M8TB | SP8M8TBTR-ND | 289-SP8M8TB | SP8M8TB |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SP8M8TB | FET, MOSFET Arrays | 30V 6A 4.5A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | |||
| V(BR)DSS | 30 volts | |||
| PD | 2000 milliwatts |