ROHM Semiconductor USA, LLC 80V 3.4A 2.6A MOSFET Transistor SP8M41HZGTB

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP Product overview: SP8M41HZGTB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 3.4A, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 3.4A, 2.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SP8M41HZGTB can be used for catalog matching and distributor lookup.

Mosfet Array N and P-Channel 80V 3.4A (Ta), 2.6A (Ta) 2W (Ta) Surface Mount 8-SOP

Mosfet Array N and P-Channel 80V 3.4A (Ta), 2.6A (Ta) 2W (Ta) Surface Mount 8-SOP

Mosfet Array N and P-Channel 80V 3.4A (Ta), 2.6A (Ta) 2W (Ta) Surface Mount 8-SOP

Win Source Part Number: 1095537-SP8M41HZGTB
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power - Max: 2W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, 11.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 1000pF @ 10V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: 846-SP8M41HZGTBCT,846-SP8M41HZGTBDKR,846-SP8M41HZGTBTR