ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - SP8K2FU6TB SP8K2FU6TB

Manufacturer: Rohm Semiconductor
Win Source Part Number: 047202-SP8K2FU6TB
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 10.1nC @ 5V
Max Input Capacitance: 520pF @ 10V
Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Mosfet Array 2 N-Channel (Dual) 30V 6A 2W Surface Mount 8-SOP

MOSFET 2N-CH 30V 6A 8SOP Product overview: SP8K2FU6TB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SP8K2FU6TB can be used for catalog matching and distributor lookup.